METHOD OF FORMING MANGANESE-CONTAINING FILM, PROCESSING SYSTEM, ELECTRONIC DEVICE PRODUCTION METHOD, AND ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a manganese-containing film by a chemical vapor growth method which can form a manganese-containing film having a film of manganese silicate and/or manganese oxide and being good in adhesiveness with a metal film of an upper layer on the boundary surface between silicon and an oxygen-containing substrate.SOLUTION: A method of forming a manganese-containing film includes steps of (1)heat-treating a substrate 2 containing silicon and oxygen to degas the substrate 2 and (2)forming a metal manganese film 3 on the degassed substrate 2 by a chemical vapor growth method using a gas containing a manganese compound. The film formation temperature in the step (2) is set to be higher than the degas treatment temperature in the step (2). In the step (2), a reductive reaction gas is introduced additionally so as to form a manganese-containing film 7 consisting of an interlayer 4 composed of a film manganese silicate and/or manganese oxide formed in the boundary with the substrate 2 and the metal manganese film 3 formed on the interlayer 4.