| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of suppressing an increase of the size of a semiconductor device.SOLUTION: The semiconductor device disclosed herein comprises: a first semiconductor region 2 of a second conductivity type, which separates a drain region 56 from a source region 54; and a gate insulating film 4. The semiconductor device comprises an insulator region 26 which is positioned between a gate electrode 6 and a source electrode 48 and covers a side face of the gate electrode 6. The semiconductor device comprises a second semiconductor region 20 which is positioned between the gate electrode 6 and the source electrode 48 and also positioned between the gate insulating film 4 and the insulator region 26. In the second semiconductor region 20, a first conductivity type region 16 is electrically connected to the gate electrode 6, and a second conductivity type region 18 is connected to the source electrode 48. |
