发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.</p> |
申请公布号 |
KR20140085543(A) |
申请公布日期 |
2014.07.07 |
申请号 |
KR20147013909 |
申请日期 |
2012.10.17 |
申请人 |
DENSO CORP. |
发明人 |
HOSHI SHINICHI;MIZUNO SHOJI;KACHI TETSU;UESUGI TSUTOMU;TOMITA KAZUYOSHI;ITO KENJI |
分类号 |
H01L29/808;H01L21/336;H01L21/337;H01L21/338;H01L29/778;H01L29/78;H01L29/812 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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