| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with low driving voltage and a method of manufacturing the semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. The concentration profile of Mg in the p-side regions including the light-emitting layer, the second p-side layer, and the third p-side layer includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion, and a seventh portion. The Mg concentration in the sixth portion ranges from 1×10cmor more to 3×10cmor less. The Al concentration at a second position is one-hundredth of the maximum value. The Mg concentration at the second position is 2×10cmor more. |
