| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electron beam lithography method and an electron beam lithography device capable of suppressing influences of particles on pattern accuracy.SOLUTION: The electron beam lithography method comprises irradiating a resist applied on a mask substrate mounted in a drawing chamber with an electron beam emitted from an electron gun to draw a desired pattern on the resist. The method includes: a step of controlling an absolute acceleration voltage of the electron beam to 50 kV or higher; and a step of irradiating the resist with the electron beam through a conductive thin film disposed above and spaced from the mask substrate.</p> |
