| 摘要 |
<p>PROBLEM TO BE SOLVED: To stably manufacture a semiconductor device.SOLUTION: The provided method includes a step of loading a wafer WF1 atop a support member SP1 possessing a cathode electrode CE1 and then contacting, with the cathode electrode CE1, the outer circumferential portion of one surface of the wafer WF1, a step of immersing the wafer WF1 within a treatment tank PB1 possessing an anode electrode AE1, and a step of electrolytically plating the wafer WF1. The same includes, either before the step of immersing the wafer WF1 within the treatment tank PB1 or after the step of electrolytically plating the wafer WF1, a step of relatively rotating, in a state where the outer circumferential portion of the wafer WF1 is being contacted with the cathode electrode CE1, the cathode electrode CE1 against the wafer WF1 around a rotation axis coinciding with the central axis of the wafer WF1.</p> |
