| 摘要 |
<p>Provided is a method for manufacturing an EUV mask blank which has superior properties as an EVU mask blank and comprises an absorption layer which shows high leveling over a wide composition range. The method for manufacturing a reflective mask blank for EUV lithography (EUVL) manufactures a reflective mask blank for EUVL by forming a multi-layered reflective film which reflects EUV light on a film forming surface of a substrate, forming a protective layer for the multi-layered reflective film on the multi-layered reflective film, and forming an absorption layer for absorbing EUV light on the protective layer, wherein the multi-layered reflective film is an Mo/Si multi-layered reflective film; the protective layer is an Ru layer or an Ru compound layer; the absorption layer is a layer containing at least Ta and N; and an Si thin film or an Si oxide thin film with 2nm or less of a film thickness is formed on the protective layer after the formation of the protective layer and before the formation of the absorption layer.</p> |
