发明名称 |
DEPOSITION APPARATUS AND FILM FORMATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To improve efficiency in the use of a material gas in film formation and inhibit a drop or adhesion of a reaction product to a deposition target substrate.SOLUTION: In an inner space of a housing chamber 100 for housing a substrate, a material gas Gs is supplied from a lateral of the substrate along an X direction; and a first block gas Gb1 and a second block gas Gb 2 for inhibiting floating of the material gas Gs in a Z direction are supplied from an upstream side in the X direction from the substrate; and a third block gas Gb3 for inhibiting floating of the material gas Gs in the Z direction is supplied from immediately above the substrate; and a fourth block gas Gb4 for inhibiting floating of the material gas Gs in the Z direction and introducing the material gas Gs and the like to an exhaust port provided on a downstream side in the X direction and down below the internal space 100a is supplied from a downstream side in the X direction from the substrate. |
申请公布号 |
JP2014127666(A) |
申请公布日期 |
2014.07.07 |
申请号 |
JP20120285156 |
申请日期 |
2012.12.27 |
申请人 |
SHOWA DENKO KK |
发明人 |
MUTO DAISUKE;MOMOSE KENJI;KIMURA YUSUKE;UTASHIRO TOMOYA;TAKAHASHI SEIICHI;KURIBAYASHI HISANORI;YASUDA NAOKI |
分类号 |
H01L21/205;C01B31/36;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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