摘要 |
<p>The present invention relates to a monomer for a hard mask composition represented by Chemical formula 1, a hard mask composition including the monomer, and a method for forming patterns using the same. [Chemical formula 1] In Chemical formula 1, A0, A1, A2, L1, L1′, L2, L2′, X1, X2, m and n are defined as in the specification.</p> |