发明名称 SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD USING SAME
摘要 <p>[Problem] To increase the substrate heating efficiency and to reduce the time needed for the substrate to acquire a higher temperature. [Solution] A substrate treatment device, provided with: an airtight processing chamber (30) comprising a cylindrical reaction tube (100) and a seal cap (110); a furnace body heating unit (200), which is a heater provided around the reaction tube (100); a cassette (410) arranged in the processing chamber (30), a plurality of glass substrates (20) being housed in the cassette (410); an electric fan (500) provided to a sealed-off lateral part inside the reaction tube (100); and a cylindrically shaped straightening vane (430) for covering the surface of the glass substrate (20) arranged at the outermost position, the glass substrate (20) being one of the glass substrates (20) arranged by being placed on the cassette (410) in the processing chamber (30), and for controlling an airflow (Q) heading toward the blade part (510) of the electric fan (500) so as to flow along the inner circumferential surface (100a) of the reaction tube (100).</p>
申请公布号 KR20140085584(A) 申请公布日期 2014.07.07
申请号 KR20147014504 申请日期 2012.12.26
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 YOSHIDA HIDENARI;KUNII YASUO;NISHITANI EISUKE;HIRANO MITSUHIRO;TANIYAMA TOMOSHI
分类号 H01L21/02;H01L21/205;H01L21/22;H01L21/324;H01L31/04;H01L31/18 主分类号 H01L21/02
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