| 摘要 |
<p>The present invention provides a semiconductor device in which an implantation process of a gate and an implantation process of a source/drain region are not affected with each other when a transistor with a recess gate is formed; and a manufacturing method thereof. The semiconductor device manufacturing method according to the present invention comprises a step of forming a recess by etching a substrate; a step of forming an insulating layer on the substrate including the recess; a step of forming a gate stack including a silicon containing layer on the insulating layer; a step of forming a recess gate including a silicon containing electrode by etching the gate stack; a step of injecting a dopant to the silicon containing electrode; a step of forming a gate insulating layer on the recess gate; a step of forming an active region on the gate insulating layer; and a step of forming a source/drain region on the active region. The present invention can have a separated structure in which the implantation process of the recess gate and the implantation process of the source/drain region are not affected with each other by performing the conversion implantation process for the recess gate before the implantation process for forming the source/drain region.</p> |
