MANGANESE METAL FILM FORMING METHOD, PROCESSING SYSTEM, ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE

摘要

The present invention provides a manganese metal film forming method by a chemical growth method which certainly performs successive thin film processes even when a manganese metal film becomes thin. (1) a process of degassing by performing a thermal process on a substrate which has a lower part including silicon and oxygen, (2) a process of forming a manganese metal thin film by a chemical vapor growth method on the degassed lower part by using a gas including a manganese compound. The partly oxidized manganese metal film is formed by further introducing a gas including oxidant in (2) process.