发明名称 CMP SLURRY COMPOSITION AND POLISHING METHOD USING THE SAME
摘要 A CMP slurry composition according to the present invention includes: ceria particles having a negative surface potential; a phosphate compound having more than one phosphate group; and deionized water, while having the pH below 7. The surface potential of the ceria particles ranges from -10 to -50 mV, and the phosphate compound takes up 0.01 to 0.5 wt% among the entire composition, while having more than three phosphate groups. In addition, the pH of the composition ranges from 4-7.
申请公布号 KR20140085253(A) 申请公布日期 2014.07.07
申请号 KR20120155609 申请日期 2012.12.27
申请人 CHEIL INDUSTRIES INC. 发明人 KANG, DONG HUN;KIM, YONG KUK
分类号 C09K3/14;H01L21/304 主分类号 C09K3/14
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