| 摘要 |
<p>The purpose of the present invention is to provide a film formation method of amorphous silicon, by which precision of surface roughness can be further improved to cope with progresses of miniaturization of contact holes, lines, or the like. The film formation method of amorphous silicon includes the steps of forming a seed layer (3) on a surface of a substrate (2) by heating the substrate (2) and flowing aminosilane-based gas onto the heated substrate (2); and forming an amorphous silicon film on the seed layer (3) by heating the substrate (2), supplying silane-based gas containing no amino group onto the seed layer (3) on the surface of the heated substrate (2), and thermally decomposing the silane-based gas containing no amino group.</p> |
