发明名称 METHOD FOR MANUFACTURING HIGH-PURITY SILICON CARBIDE
摘要 PROBLEM TO BE SOLVED: To provide a method capable of manufacturing, easily at a low cost, a high-purity silicon carbide.SOLUTION: The provided method for manufacturing a high-purity silicon carbide comprises: (F) a chloride mixing step of obtaining, by mixing a solid component including a silica-carbon mixture and an aqueous solution including an alkali metal or alkaline earth metal chloride so as to prepare a slurry and then obtaining, by solid/liquid-separating the slurry, not only a solid component including the silica-carbon mixture and alkali metal or alkaline earth metal chloride but also a liquid component; and (G) a heating step of obtaining a high-purity silicon carbide by heating the solid component obtained at the step (F) and including the silica-carbon mixture and alkali metal or alkaline earth metal chloride.
申请公布号 JP2014125407(A) 申请公布日期 2014.07.07
申请号 JP20120285112 申请日期 2012.12.27
申请人 TAIHEIYO CEMENT CORP 发明人 ICHINOTSUBO YUKITERU;MASUDA KENTA;SUZUKI MASAKAZU;NONAKA KIYOSHI
分类号 C01B31/36 主分类号 C01B31/36
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