发明名称 SAPPHIRE SINGLE CRYSTAL GROWTH APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To adjust temperature of a sapphire single crystal body being pulled, with good control in response to the growing condition of the sapphire single crystal body.SOLUTION: In a sapphire single crystal growth apparatus, together with a first induction coil 32 arranged around a crucible 10, there is provided a second induction coil 36 arranged around an after heater member 20, at an interval between it and the first induction coil 32. The apparatus is also provided with a second power source 34 which heats the pulled sapphire single crystal body 15 by electrifying a second high-frequency current through the second induction coil 36 to make the after heater member 20 generate heat and control means 50 of adjusting the magnitude and phase of a first high-frequency current and the magnitude and phase of the second high-frequency current. The control means 50 adjusts the phase of the first high-frequency current and the phase of the second high-frequency current in such a way that the phase of the second high-frequency current is reverse to the phase of the second high-frequency current.</p>
申请公布号 JP2014125404(A) 申请公布日期 2014.07.07
申请号 JP20120284972 申请日期 2012.12.27
申请人 KYOCERA CORP 发明人 MURASE YU
分类号 C30B29/20;C30B15/14;F27B14/04;F27B14/06;F27B14/14;F27B14/20;F27D11/06;H05B6/06;H05B6/24 主分类号 C30B29/20
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