| 摘要 |
PURPOSE: A method for depositing a low temperature thin film is provided to improve the property of a thin film by increasing the density of the thin film and by reducing the density of the pin holes. CONSTITUTION: A gas is supplied into a reaction chamber. The gas includes silicon. The gas including the silicon is decomposed. A silicon thin film is deposited on a substrate within the reaction chamber. The silicon atoms of the silicon thin film are rearranged. [Reference numerals] (AA) Silicon thin film metalizing; (BB) Silicon atom rearrangement; (CC) Reaction; (DD) Silicon atom; (EE) Silicon nitride; (FF) Nitrogen ion |
