发明名称 DEPOSITION APPARATUS AND FILM MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To inhibit a drop or adhesion of a reaction product to a deposition target substrate.SOLUTION: In a deposition apparatus, to a substrate housed in an internal space of a housing chamber 100, a material gas Gs is supplied from a lateral of the substrate along an X direction; a third block gas Gb3 is supplied from immediately above the substrate along a -Z direction at a third block gas flow rate and a fourth block gas Gb4 is supplied from a downstream side in the X direction from the substrate and from above along the -Z direction at a fourth block gas flow rate faster than the third block gas flow rate; a second block gas Gb2 is supplied from an upstream side in the X direction from the substrate and from above along the -Z direction at a second block gas flow rate between the third block gas flow rate and the fourth block gas flow rate; and a first bloc gas Gb1 is supplied from an upstream side in the X direction from the substrate and from above along the X direction at a first block gas flow rate faster than each of the second block gas flow rate to the fourth block gas flow rate.
申请公布号 JP2014127669(A) 申请公布日期 2014.07.07
申请号 JP20120285159 申请日期 2012.12.27
申请人 SHOWA DENKO KK 发明人 MUTO DAISUKE;MOMOSE KENJI;KIMURA YUSUKE;UTASHIRO TOMOYA;TAKAHASHI SEIICHI;KURIBAYASHI HISANORI;YASUDA NAOKI
分类号 H01L21/205;C23C16/42;C23C16/455 主分类号 H01L21/205
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