发明名称 |
DEPOSITION APPARATUS AND FILM MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To inhibit a drop or adhesion of a reaction product to a deposition target substrate.SOLUTION: In a deposition apparatus, to a substrate housed in an internal space of a housing chamber 100, a material gas Gs is supplied from a lateral of the substrate along an X direction; a third block gas Gb3 is supplied from immediately above the substrate along a -Z direction at a third block gas flow rate and a fourth block gas Gb4 is supplied from a downstream side in the X direction from the substrate and from above along the -Z direction at a fourth block gas flow rate faster than the third block gas flow rate; a second block gas Gb2 is supplied from an upstream side in the X direction from the substrate and from above along the -Z direction at a second block gas flow rate between the third block gas flow rate and the fourth block gas flow rate; and a first bloc gas Gb1 is supplied from an upstream side in the X direction from the substrate and from above along the X direction at a first block gas flow rate faster than each of the second block gas flow rate to the fourth block gas flow rate. |
申请公布号 |
JP2014127669(A) |
申请公布日期 |
2014.07.07 |
申请号 |
JP20120285159 |
申请日期 |
2012.12.27 |
申请人 |
SHOWA DENKO KK |
发明人 |
MUTO DAISUKE;MOMOSE KENJI;KIMURA YUSUKE;UTASHIRO TOMOYA;TAKAHASHI SEIICHI;KURIBAYASHI HISANORI;YASUDA NAOKI |
分类号 |
H01L21/205;C23C16/42;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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