发明名称 METHOD OF FORMING PROTECTIVE FILM BY PLASMA CVD METHOD
摘要 PROBLEM TO BE SOLVED: To enable stable operation without cleaning over a long period, achieve high production efficiency while keeping stable film formation conditions and provide a protective film having high adhesion to a substrate.SOLUTION: A method of forming a protective film on a conductive substrate by a plasma CVD method includes a step of dividing substrates into two groups and mounting one group of substrates on a vacuum chamber 2 in such a condition as to be electrically insulated from the other group of substrates and the chamber, in a plasma CVD apparatus 1 for the method, a step of evacuating the vacuum chamber 2 and a step of supplying a process gas containing a film formation gas into the vacuum chamber 2, while supplying an AC power to between the two groups of substrates, to produce discharge plasma between the substrates so as to form a protective film on the substrates.
申请公布号 JP2014125670(A) 申请公布日期 2014.07.07
申请号 JP20120284929 申请日期 2012.12.27
申请人 KOBE STEEL LTD 发明人 TAMAGAKI HIROSHI;HAGA JUNJI;ITO HIROTAKA
分类号 C23C16/503;C23C16/509 主分类号 C23C16/503
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