| 摘要 |
<p>A semiconductor device according to an embodiment of the present invention comprises an n+ type silicon carbide substrate; a first p-type pillar region and an n−type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p-type epitaxial layer and an n+ region sequentially disposed on the n−type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n−type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p-type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate, wherein the first p-type pillar region is disposed within the n−type epitaxial layer, the first p-type pillar region is disposed below the trench, and the first p-type pillar region is spaced apart from the trench.</p> |
