| 摘要 |
A method of forming a layer forms a layer using an atomic layer deposition (ALD) method by rotating a rotation table, which is provided in a chamber and is able to load a substrate (W) on a substrate loading part, so that a substrate passes through a first treatment region and a second treatment region, which supply different types of gas reacting with each other. The method includes a coating step of forming a layer on the rotation table while the substrate loading part is at a predetermined temperature by rotating the rotation table without loading the substrate on the substrate loading part; and a processing step of forming the layer on the substrate while the substrate loading part or the substrate is below the predetermined temperature by rotating the rotation table having the substrate loaded on the substrate loading part. |
