| 摘要 |
The present invention relates to a method for manufacturing a refractory used in a sapphire single crystal growth furnace made of melting stabilized zirconia beads having minimized yttria content, comprising the steps of: (a) melting yttria-containing zirconia through a skull melting method using high-frequency waves; (b) dropping melted zirconia in the air; (c) forming the melted zirconia into the melting stabilized zirconia beads by spraying high-pressure air using a high-pressure air spray unit toward the melted zirconia; (d) manufacturing the refractory by laminating the melting stabilized zirconia in a refractory molding unit; and (e) performing a post-process by extracting the refractory from the refractory molding unit after cooling. The present invention also relates to a refractory manufacturing apparatus used in the sapphire single crystal growth furnace made of the melting stabilized zirconia beads having minimized yttria content, comprising: a support; a melting furnace for melting the zirconia containing the yttria by being provided to be able to rotate in one direction in the upper part of the support; the high-pressure air spray unit for creating the melting stabilized zirconia beads by spraying high-pressure air toward the melted zirconia dropped from the melting furnace; and the refractory molding unit for creating the refractory by being located in the lower part of the high-pressure air spray unit and arranged in a direction to which the melting furnace is tilted, thereby laminating the melting stabilized zirconia beads. |
