MANUFACTURING METHOD OF LIGHT-EMITTING DIODE USING STEP TYPE 3-D BLOCKING PATTERN AND LIGHT-EMITTING DIODE THEREBY

摘要

A technological subject matter of the present invention is to provide a method of fabricating a semiconductor light emitting diode device using a step type 3-D blocking pattern and a light emitting diode device fabricated by the same. The method of fabricating the semiconductor light emitting diode device in terms of the semiconductor light emitting diode device includes a first step of forming a first resist layer on a top of a substrate; a second step of forming a first blocking mask by patterning the first resist layer; a third step of depositing a first blocking pattern layer on the first blocking mask; a fourth step of forming a 3-D first blocking pattern in a″T″shape on a top of the substrate by removing the first blocking mask; a fifth step of forming a second resist layer after the first blocking layer is patterned; a sixth step of forming a second blocking mask by patterning the second resist layer; a seventh step of depositing a second blocking pattern layer on top of the second blocking mask; a eighth step of forming a 3-D second blocking pattern in a″T″shape having an upper region entirely covering a region between the first blocking patterns, and formed in a step type on a region between the first blocking patterns on the substrate by removing the second blocking mask; and a nineth step of depositing a semiconductor layer after the second blocking pattern is formed. Thus, the present invention has an advantage of improving efficiency of the light emitting diode device by reducing defects occurring when forming the semiconductor layer through by the 3-D blocking pattern on the top of the substrate.