| 摘要 |
<p>The invention stems from the realization that it is possible to control the electric field in the gate region of a field effect transistor (MOS, FET etc.) without changing the net charge of the gate electrode or without resorting to electrical conduction. According to an aspect of the invention, the electric field is changed by modifying the charge distribution within the gate electrode without materially adding or subtracting charge carriers to it or changing its net charge. This is achieved by displacing one or more sources of electric field, for example free charges, or conductive or non-conductive surface charges in the proximity of the gate electrode. By electric induction, the electric field produce a separation of charges in the gate electrode and an alteration in the conduction state of the FET transistor.</p> |
