| 摘要 |
<p>A method of fabricating organic electroluminescent light emitting device having an asymmetric delta structure is provided. The method includes: forming a switching thin film transistor and a driving thin film transistor on a driving region of a substrate, on which a plurality of pixel regions have a light emitting region and selectively have a driving region which are defined; forming a first protective layer covering the switching and the driving thin film transistors and having a first contact hole exposing a drain electrode of the driving thin film transistor, a connection pattern making contact with the drain electrode through the first contact hole of the first protective layer on top of the first protective layer and extending to the light emitting region, and a first storage electrode spaced apart from the connection pattern and simultaneously forming a second protective layer on a space region between the connection pattern and the first storage electrode; forming a third protective layer having a second contact hole exposing the connection electrode on the connection pattern and the first storage electrode; and forming an organic electroluminescent light emitting diode including a first electrode making contact with the connection pattern through the second contact hole, an organic light emitting layer, and a second electrode on the light emitting region on the third protective layer.</p> |
