发明名称 SWITCH CIRCUIT AND SPDT SWITCH CIRCUIT
摘要 The present invention relates to a switch circuit and an SPDT circuit. According to an embodiment of the present invention, provided is the switch circuit including an MOS transistor which transmits or blocks a signal according to on-off operation; a gate resistor which is connected to a gate of the MOS transistor; and a variable gate resistor circuit which increases a gate resistor value when the MOS transistor is switched from off to on state. Also, the SPDT circuit is provided.
申请公布号 KR20140083513(A) 申请公布日期 2014.07.04
申请号 KR20120153374 申请日期 2012.12.26
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 CHOI, JAE HYOUCK;PARK, SUNG HWAN
分类号 H03K17/687;H04B1/48 主分类号 H03K17/687
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