| 摘要 |
The present technology provides a method for fabricating a semiconductor device capable of preventing a conductive structure from being lost when a non-reacted metallic layer is removed after metallic silicide has been formed. The method of fabricating the semiconductor device according to the present technique includes the steps of forming a non-silicided structure having a blocking layer and a metal-containing layer laminated on a first region of a substrate having the first region and a second region; forming a silicided structure in the second region of the substrate; forming an insulating layer on the substrate including the non-silicided structure; forming a first contact hole to expose the surface of the silicided structure and a preliminary second contact hole to expose an upper surface of the blocking layer by etching the insulating layer; forming metal silicide on the silicided structure exposed by the first contact hole; and forming a second contact hole to expose the metal containing layer by etching the blocking layer exposed by the preliminary second contact hole. |
