LOW-VOLTAGE ULC-TVS DEVICE AND THE FABRICATION METHOD

摘要

The present invention relates to a low-voltage ULC-TVS semiconductor comprising a substrate; a diffusion preventing layer and a first epi layer which are successively formed on the substrate; an ion injecting layer which is formed by injecting high-concentration impurities which are an opposite type to the first epi layer by corresponding to a predetermined area in which a down steering diode (DSD) and a zener diode are formed on the first epi layer; a second epi layer which is formed on the first epi layer; a type change layer which is formed by injecting impurities which are an opposite type of the second epi layer to an area in which the DSD and an upper steering diode (USD) of the second epi layer are arranged; a plurality of trenches which is formed to be electrically separated between the DSD and the USD; an insulating film which comprises a contact window on an oxide film after growing the oxide film on an output; and a metal wiring which is formed on the insulating film to be conducted to the DSD and the USD on the insulating film. The present invention is provided to form a bonding structure in which the diffusion preventing layer is inserted when a plurality of semiconductor epi layers is grown and sharply control a bonding side, thereby accurately controlling the breakdown voltage of the semiconductor.