发明名称 |
SINTERED IGZO SPUTTERING TARGET HAVING HIGH ZINC CONTENT AND METHOD FOR FORMING THE SAME |
摘要 |
Disclosed is a method for producing a high density sintered body of an indium oxide-gallium oxide-zinc oxide mixed compound having a high zinc fraction. The method for producing the high density sintered body of the indium oxide-gallium oxide-zinc oxide according to the present invention comprises the steps of: producing powder mixed with indium oxide (In_2O_3) powder, gallium oxide (Ga_2O_3) powder, and zinc oxide (ZnO) at a ratio of 1:1:10; producing a mixed compound having a crystal structure of InGaZn_5O_8 by heating the mixed powder; pulverizing and micronizing the mixed compound of InGaZn_5O_8; adding zinc oxide (ZnO) powder in the mixed compound powder of InGaZn_5O_8; producing a molded product by using the mixed powder added with the zinc oxide (ZnO) powder as a main material; and sintering the molded product. |
申请公布号 |
KR101410943(B1) |
申请公布日期 |
2014.07.04 |
申请号 |
KR20120150028 |
申请日期 |
2012.12.20 |
申请人 |
RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY |
发明人 |
KIM, JU YOUNG;LEE, YOUNG JOO;OH, YOON SUK;YANG, HEOK |
分类号 |
C04B35/00;C04B35/64;C23C14/34 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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