发明名称 SINTERED IGZO SPUTTERING TARGET HAVING HIGH ZINC CONTENT AND METHOD FOR FORMING THE SAME
摘要 Disclosed is a method for producing a high density sintered body of an indium oxide-gallium oxide-zinc oxide mixed compound having a high zinc fraction. The method for producing the high density sintered body of the indium oxide-gallium oxide-zinc oxide according to the present invention comprises the steps of: producing powder mixed with indium oxide (In_2O_3) powder, gallium oxide (Ga_2O_3) powder, and zinc oxide (ZnO) at a ratio of 1:1:10; producing a mixed compound having a crystal structure of InGaZn_5O_8 by heating the mixed powder; pulverizing and micronizing the mixed compound of InGaZn_5O_8; adding zinc oxide (ZnO) powder in the mixed compound powder of InGaZn_5O_8; producing a molded product by using the mixed powder added with the zinc oxide (ZnO) powder as a main material; and sintering the molded product.
申请公布号 KR101410943(B1) 申请公布日期 2014.07.04
申请号 KR20120150028 申请日期 2012.12.20
申请人 RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY 发明人 KIM, JU YOUNG;LEE, YOUNG JOO;OH, YOON SUK;YANG, HEOK
分类号 C04B35/00;C04B35/64;C23C14/34 主分类号 C04B35/00
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