| 摘要 |
The present invention relates to a semiconductor memory device improving a data read speed. Provided is a semiconductor device including a bit line sensing and amplifying part sensing and amplifying data of a pair of bit lines, a sensing and amplifying power supply part supplying a sinking voltage and a sourcing voltage to the bit line sensing and amplifying part, a column operating part transmitting the data of the pair of bit lines to a pair of segment lines in response to a column selection signal, and a local line operating part operating data of the pair of segment lines with a pair of local lines while receiving the sinking voltage or the sourcing voltage from the sensing and amplifying power supply part. |
