| 摘要 |
An embodiment relates to a light emitting device, a method for manufacturing the light emitting device, a light emitting package, and a lighting system. An light emitting device according to an embodiment includes: a first conductivity type semiconductor layer (112); an active layer (114) on the first conductivity type semiconductor layer (112); an undoped nitride semiconductor layer (127) on the active layer (114); and a second conductivity type semiconductor layer (116) on the undoped nitride semiconductor layer (127). |
