PROCEDE DE REALISATION D'UNE STRUCTURE A CAVITE FERMEE HERMETIQUEMENT ET SOUS ATMOSPHERE CONTROLEE

摘要

#CMT# #/CMT# The method involves forming an electronic device (104) and a metallic material portion (110) on a substrate (106), where the material portion releases gas when a material is heated, and communicates with interior of a hermetically sealed cavity (102) of an encapsulation structure (100). The cavity is formed between the substrate and a cap (114). A total or a part of the portion of material is heated such that a part of gas is released from the material portion into the cavity. #CMT#USE : #/CMT# Method for forming an encapsulation structure i.e. thin film packaging encapsulation structure for an electronic system e.g. microelectromechanical system such as switch and complementary metal-oxide-semiconductor. Can also be used for a micro-opto-electro-mechanical system or nanoelectromechanical system. #CMT#ADVANTAGE : #/CMT# The material portion is formed on the substrate, and the total or part of the portion of material is heated such that the part of gas is released from the material portion into the cavity so as to increase reigning pressure in the cavity, so that final pressure obtained in the cavity is higher than the reigning pressure in the cavity during its closing while avoiding the need for gas establishment in the cavity after its closing. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view illustrating a method for forming an encapsulation structure. 100 : Encapsulation structure 102 : Hermetically sealed cavity 104 : Electronic device 106 : Substrate 110 : Metallic material portion 114 : Cap.