| 摘要 |
A photonic crystal laser (100) comprises an n-type substrate (111), an n-type clad layer (112), an active layer (113), a p-type clad layer (116), a photonic crystal layer (115), a p-type electrode (118), an n-type electrode (119) and a package member (120). The n-type clad layer (112) is formed on a first surface (111a) of the n-type substrate (111). The active layer (113) is formed on the n-type clad layer (112). The p-type clad layer (116) is formed on the active layer (113). The photonic crystal layer (115) is formed between the n-type clad layer (112) and the active layer (113) or between the active layer (113) and the p-type clad layer (116), and includes a photonic crystal portion (115a). The p-type electrode (118) is formed on the photonic crystal portion (115a). The n-type electrode (119) is formed on a second surface (111b), and includes a light-transmitting portion (119a) arranged on a position opposed to the photonic crystal portion (115a) and an outer peripheral portion (119b) having lower light transmittance than the light-transmitting portion (119a). |
