| 摘要 |
<p>A FinFET includes a substrate and a fin structure on the substrate. The fin structure includes a channel between a source and a drain, wherein the source, the drain, and the channel have the first type dopant. The channel includes a Ge, SiGe, or III-V semiconductor. A gate dielectric layer is located over the channel and a gate is located over the gate dielectric layer.</p> |
