发明名称 |
FINDING OPTIMAL READ THRESHOLDS AND RELATED VOLTAGES FOR SOLID STATE MEMORY |
摘要 |
An expected value associated with stored values in solid state storage, as well as a set of three or more points are obtained where the three or more points include a voltage and a value associated with stored values. Two points having ratios closest to the expected value are selected from the set. A voltage is determined based at least in part on the selected two points and the expected value. |
申请公布号 |
KR20140084298(A) |
申请公布日期 |
2014.07.04 |
申请号 |
KR20147014174 |
申请日期 |
2012.12.03 |
申请人 |
SK HYNIX MEMORY SOLUTIONS INC. |
发明人 |
TANG XIANGYU;ZENG LINGQI;BELLORADO JASON;LEE FREDERICK K.H.;SUBRAMANIAN ARUNKUMAR |
分类号 |
G06G7/48 |
主分类号 |
G06G7/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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