DISPOSITIF EMETTEUR DE RAYONNEMENT LUMINEUX A TRANSISTORS DE TYPE P ET DE TYPE N TETE-BECHE

摘要

The device has a transistor equipped with source zones (103a) and drain zones (103b) formed in an N-doped semiconductor zone and a gate (106). Another transistor is equipped with source and drain zones formed in P-doped semiconductor zone (113) and another gate. The gates of the two transistors are placed opposite to each other on sides of a semiconductor zone (101) including a determined region (101c) containing an intrinsic or non-doped semiconductor material. The region includes a direct bandgap material. An independent claim is also included for a method for realizing a microelectronic light radiation emitting device.