发明名称 EXCHANGE ENHANCED CAP MANUFACTURED WITH ARGON AND OXYGEN IMPLANTATION
摘要 <p>PROBLEM TO BE SOLVED: To provide an exchange coupling enhanced cap manufactured with argon and oxygen implantation.SOLUTION: This invention provides magnetic media having a novel cap layer that enables the cap layer having improved exchange coupling and reduced thickness. The cap layer is doped with a non-reactive element such as Ar, Kr, Xe, Ne or He, preferably Ar. This doping enhances exchange coupling and reduces dead layers, allowing the cap layer to be made thinner for reduced magnetic spacing and improved data recording performance.</p>
申请公布号 JP2014123419(A) 申请公布日期 2014.07.03
申请号 JP20130260854 申请日期 2013.12.18
申请人 HGST NETHERLANDS B V 发明人 GUNN CHOE;IKEDA YOSHIHIRO
分类号 G11B5/72;G11B5/84 主分类号 G11B5/72
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