| 发明名称 |
RESISTIVE RANDOM ACCESS MEMORY WITH NON-LINEAR CURRENT-VOLTAGE RELATIONSHIP |
| 摘要 |
Providing for fabrication, construction, and/or assembly of a resistive random access memory (RRAM) cell is described herein. The RRAM cell can exhibit a non-linear current-voltage relationship. When arranged in a memory array architecture, these cells can significantly mitigate sneak path issues associated with conventional RRAM arrays. |
| 申请公布号 |
US2014185358(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201313733843 |
申请日期 |
2013.01.03 |
| 申请人 |
Crossbar, Inc |
发明人 |
JO Sung Hyun;Kim Kuk-Hwan |
| 分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive random-access memory (RRAM) cell, comprising:
a first metal layer comprising a first electrical conductive metal; a second metal layer comprising a second electrical conductive metal; a resistive switching material layer situated between the first metal layer and the second metal layer comprising a switching material that is an electrical insulator; and a first semiconductor layer situated between the resistive switching material layer and the first metal layer comprising a lightly doped semiconductor material. |
| 地址 |
US |
