发明名称 TIN-PLATED ELECTROCONDUCTIVE MATERIAL AND PRODUCTION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a tin-plated electroconductive material in which the barrier properties of an underlying base material comprising Cu or a Cu alloy are enhanced, and diffusion of Cu is surely prevented to improve the heat resistance thereof and which can keep stabilized contact resistance even under a high-temperature environment and to provide a production method of the tin-plated electroconductive material.SOLUTION: The tin-plated electroconductive material is obtained by forming a Ni layer, an intermediate layer comprising a Cu-Sn alloy layer, a surface layer comprising Sn or a Sn alloy in this order on the surface of the base material which has no work-affected layer and comprises Cu or the Cu alloy. The Ni layer is grown epitaxially on the base material. The average diameter of crystal grains of the Ni layer is 1 μm or larger. The thickness of the Ni layer is 0.1-1.0 μm, that of the intermediate layer is 0.2-1.0 μm, and that of the surface layer is 0.5-2.0 μm.
申请公布号 JP2014122403(A) 申请公布日期 2014.07.03
申请号 JP20120279880 申请日期 2012.12.21
申请人 MITSUBISHI MATERIALS CORP 发明人 KATO NAOKI;TANINOUCHI YUKI;INOUE YUKI
分类号 C25D7/00;C25D5/34;C25D5/50;H01R13/03 主分类号 C25D7/00
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