SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can ensure removal of an unintended impurity adhering to a semiconductor substrate with etching of the semiconductor substrate and which enables elaborate designing of a concentration profile of an impurity of the semiconductor substrate; and provide a semiconductor device manufactured by the manufacturing method.SOLUTION: A semiconductor device manufacturing method comprises: a process of a first semiconductor region including an active element for controlling a current flowing in a surface of a substrate in a thickness direction of the substrate; a process of grinding a rear face of the substrate; a first etching process of etching the rear face of the substrate after grinding by a phosphorous-containing medicinal solution; a second etching process of etching the rear face after the first etching by an etching method of an etching rate lower than that of the first etching; and a process of implanting an impurity from the rear face of the substrate after the second etching to form a second semiconductor region where a current flows.