发明名称 |
METHOD TO INTEGRATE DIFFERENT FUNCTION DEVICES FABRICATED BY DIFFERENT PROCESS TECHNOLOGIES |
摘要 |
The present disclosure is directed to an apparatus and method for manufacture thereof. The apparatus includes a first passive substrate bonded to a second active substrate by a conductive metal interface. The conductive metal interface allows for integration of different function devices at a wafer level. |
申请公布号 |
US2014183611(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
US201213729281 |
申请日期 |
2012.12.28 |
申请人 |
MANUFACTURING CO., LTD. TAIWAN SEMICONDUCTOR |
发明人 |
Chang Kuei-Sung;Cheng Chun-Wen;Kalnitsky Alex;Chu Chia-Hua |
分类号 |
H01L49/02;H01L27/06 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus comprising:
a first substrate comprising at least a passive device comprising a capacitor, and including a first metal bond pattern thereon, wherein the capacitor comprises an upper plate and a lower plate with a dielectric therebetween; and a second substrate comprising an active device and including a second metal bond pattern thereon, the second metal bond pattern of the second substrate corresponding to the first metal bond pattern of the first substrate and the first and second metal bond patterns collectively forming a conductive metal interface, the second active device being bonded to the first passive device at the conductive metal interface. |
地址 |
US |