MEMORY SENSING CIRCUIT

摘要

A sensing circuit includes a sense amplifier circuit having a first and second nodes through which a magnetic memory element is sensed. A first current source is coupled to the first node a second current source is coupled to the second node. A reference magnetic memory element has a resistance associated therewith and is coupled to the first node, the reference magnetic memory element receives current from the first current source. At least one memory element, having a resistance associated therewith, is coupled to the second node and receives current from the second current source. Current from the first current source and current from the second current source are substantially the same. The logic state of the at least one memory element is sensed by a comparison of the resistance of the at least one memory element to the resistance of the reference magnetic memory element.

主权项

1. A method of reading a resistive element comprising:
programming a first set of resistive elements to a first resistance; programming a second set of resistive elements to a second resistance, each of the resistive elements of the first and second sets of resistive elements having associated therewith a resistance; a first averaging of the first set of resistive elements defining a first average resistance; a second averaging of the second set of resistive elements defining a second average resistance; a third averaging of the first average and the second average defining a third average resistance; and determining the resistance of one or more resistive elements, excluded from the first and second sets of resistive elements, by using the third average resistance.