NONVOLATILE MEMORY APPARATUS HAVING MAGNETORESISTIVE MEMORY ELEMENTS AND METHOD FOR DRIVING THE SAME

摘要

A semiconductor memory apparatus includes a source line, a first bit line disposed over the source line, a second bit line disposed under the source line, a first memory cell between the source line and the first bit line, and a second memory cell between the source line and the second bit line.

主权项

1. A semiconductor memory apparatus comprising:
a source line; a mode selection unit configured to selectively provide a voltage to the source line according to a write or read mode; a cell switching element coupled to the source line; a first memory cell coupled between the cell switching element and a bit line; and a second memory cell coupled between the cell switching element and a bit line bar, wherein voltage of the bit line bar is complementary to the voltage of the bit line, and wherein the source line is between the first and second memory cells.