PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO
摘要
<p>A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.</p>
申请公布号
WO2014104621(A1)
申请公布日期
2014.07.03
申请号
WO2013KR11493
申请日期
2013.12.11
申请人
SEOUL SEMICONDUCTOR CO., LTD.
发明人
RICHARDSON, JACOB J.;ESTRADA, DANIEL;O'HARA, EVAN C.;SHI, HAORAN;CHANSEOB, SHIN;YOON, YEOJIN