发明名称 SENSING OPERATIONS IN A MEMORY DEVICE
摘要 <p>Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.</p>
申请公布号 KR101414839(B1) 申请公布日期 2014.07.03
申请号 KR20127023451 申请日期 2011.02.23
申请人 发明人
分类号 G11C16/26;G11C16/30;G11C16/34 主分类号 G11C16/26
代理机构 代理人
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