COATING SOLUTION FOR FORMING TRANSPARENT DIELECTRIC THIN FILM FOR LOW-TEMPERATURE PROCESS AND TRANSPARENT INORGANIC THIN FILM TRANSISTOR HAVING THE THIN FILM FORMED BY THE COATING SOLUTION
摘要
Provided is a coating solution for forming a transparent dielectric thin film. The coating solution is characterized by comprising: a first material containing aluminum; a second material containing zirconium; and a solvent dissolving the first material and the second material, wherein the solvent is composed of a first solvent and a second solvent.
申请公布号
KR20140082945(A)
申请公布日期
2014.07.03
申请号
KR20140055215
申请日期
2014.05.09
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
发明人
MOON, JOO HO;YANG, WOO SEOK;SONG, KEUN KYU;JUNG, YANG HO