发明名称 COATING SOLUTION FOR FORMING TRANSPARENT DIELECTRIC THIN FILM FOR LOW-TEMPERATURE PROCESS AND TRANSPARENT INORGANIC THIN FILM TRANSISTOR HAVING THE THIN FILM FORMED BY THE COATING SOLUTION
摘要 Provided is a coating solution for forming a transparent dielectric thin film. The coating solution is characterized by comprising: a first material containing aluminum; a second material containing zirconium; and a solvent dissolving the first material and the second material, wherein the solvent is composed of a first solvent and a second solvent.
申请公布号 KR20140082945(A) 申请公布日期 2014.07.03
申请号 KR20140055215 申请日期 2014.05.09
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 MOON, JOO HO;YANG, WOO SEOK;SONG, KEUN KYU;JUNG, YANG HO
分类号 C04B35/515;H01L21/316 主分类号 C04B35/515
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