| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of Cu wiring which allows for formation of a thin and conformal barrier film for a recess with high barrier properties, while reducing the resistance of the Cu wiring.SOLUTION: A formation method of a Cu wiring for forming Cu wiring that fills a trench 203, for a wafer W having an interlayer insulating film 202 in which a trench 203 is formed in a predetermined pattern, comprises: a step of forming a barrier film 204 consisting of a TaAlN film by thermal ALD or thermal CVD at least on the surface of the trench 203; a step of forming a Cu film 206 and filling the trench 203 therewith; and a step of forming Cu wiring 208 in the trench 203 by polishing the whole surface by CMP. |
