ORGANIC THIN-FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a top-gate type organic thin-film transistor that does not damage an organic semiconductor layer.SOLUTION: A method of forming an organic thin-film transistor includes the steps of: providing a structure including a source electrode 2 and a drain electrode 4 with a channel region interposed therebetween, a gate electrode 12, and a dielectric layer 10 disposed between the source electrode 2 and the drain electrode 4 and the gate electrode 12; and patterning the dielectric layer 10 using the source electrode 2 and the drain electrode 4 as a mask and forming a dielectric region thinner than a dielectric region adjacent to the channel region in the channel region.