发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.
申请公布号 US2014183749(A1) 申请公布日期 2014.07.03
申请号 US201314109159 申请日期 2013.12.17
申请人 LEE SANGHOON;GO HYUNYONG;KIM SUNGGIL;AN KYONG-WON;LEE WOOSUNG;CHO YONGSEOK 发明人 LEE SANGHOON;GO HYUNYONG;KIM SUNGGIL;AN KYONG-WON;LEE WOOSUNG;CHO YONGSEOK
分类号 H01L23/528 主分类号 H01L23/528
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first conductive line; a second conductive line formed at substantially the same height from a substrate as the first conductive line, wherein the first and second conductive lines are spaced apart from each other; and a first sacrificial layer pattern disposed between the first and second conductive lines, wherein the first sacrificial layer pattern has at least one concave sidewall.
地址 SEONGNAM-SI KR