| 摘要 |
Embodiments of the present invention include diffusion barriers, methods for forming the barriers, and semiconductor devices utilizing the barriers. The diffusion barrier comprises a self-assembled monolayer (SAM) on a semiconductor substrate, where one surface of the SAM is disposed in contact with and covalently bonded to the semiconductor substrate, and one surface of the monolayer is disposed in contact with and covalently bonded to a metal layer. In some embodiments, the barrier comprises an assembly of one or more monomeric subunits of the following structure: Si—(CnHy) (LM), where n is from 1 to 20, y is from 2n−2 to 2n, m is 1 to 3, L is a Group VI element, and M is a metal, such as copper. In some embodiments, (CnHy) can be branched, crosslinked, or cyclic. |
| 主权项 |
1. A method for forming a diffusion barrier, the method comprising:
forming a self-assembled monolayer (SAM) on a semiconductor oxide surface, wherein the semiconductor oxide surface is disposed on a semiconductor substrate, and depositing a metal on the SAM to form a metal layer; wherein the SAM comprises an assembly of one or more monomers comprising a first functional group capable of covalently bonding to the semiconductor oxide surface and a second functional group capable of covalently bonding to a metal atom in the metal layer; wherein the monomer has the structure X3—Si—(CnHy)—(LH)m where n is from 1 to 20, y is from 2n−2 to 2n, X is a leaving group, m is 1 to 3, and L is a Group VI element; and wherein the diffusion barrier is operable to prevent migration of metal atoms through the SAM to the semiconductor substrate. |
